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參數(shù)資料
| 型號(hào)： | 2S4M |
| 廠商： | NEC Corp. |
| 英文描述： | THYRISTORS 2 A HIGH-SPEED SWITCHING SCR |
| 中文描述： | 晶閘管2甲高速開(kāi)關(guān)晶閘管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 188K |
| 代理商： | 2S4M |
Data Sheet D13535EJ2V0DS
2
2S2M, 2S4M
ELECTRICAL CHARACTERISTICS (T
j
= 25
°
C, R
GK
= 1 k
)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
T
j
= 25
°
C
10
μ
A
Repeat peak off-state
current
I
DRM
V
DM
= V
DRM
T
j
= 125
°
C
200
T
j
= 25
°
C
10
μ
A
Repetitive peak reverse
current
I
RRM
V
RM
= V
RRM
T
j
= 125
°
C
200
V
Refer to Figure 1.
On voltage
V
TM
T
j
= 25
°
C, I
TM
= 4 A
2.2
V
Refer to Figure 9.
Gate trigger voltage
V
GT
V
DM
= 6 V, R
L
= 100
0.8
μ
A
Refer to Figure 8.
Gate trigger current
I
GT
V
DM
= 6 V, R
L
= 100
T
j
= 125
°
C, V
DM
=
1
300
V
Gate non-trigger voltage
V
GD
2
V
DRM
0.2
V
Critical rate of-rise of off-
state voltage
d
V
/dt
T
j
= 125
°
C, V
DM
=
2
3
V
DRM
10
V/
μ
s
Holding current
I
H
T
j
= 25
°
C, V
D
= 24 V
10
mA
Commutating turn-off time
T
q
T
j
= 125
°
C, I
T
= 2 A
V
DM
=
2
3
V
DRM
, V
R
= 50 V
d
V
/dt = 10 V/
μ
s
T
j
= 125
°
C, V
DM
=
2
15
μ
s
Turn-on time
T
gt
3
V
DRM
I
TM
= 30 A
I
G
= 5 mA, t
1G
= 5
μ
s
2
μ
s
R
th(j-c)
Junction-to-case DC
10
°
C/W
Refer to Figure 13.
Thermal resistance
R
th(j-a)
Junction-to-ambient DC
75
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
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