參數(shù)資料
型號(hào): 2PC4617M
廠商: NXP Semiconductors N.V.
英文描述: NPN general purpose transistors
中文描述: NPN通用型晶體管
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 46K
代理商: 2PC4617M
2003 Jul 15
2
Philips Semiconductors
Product specification
NPN general purpose transistors
2PC4617M series
FEATURES
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
Board space 1.3
×
0.9 mm
Power dissipation comparable to SOT23.
APPLICATIONS
General purpose small signal DC applications
Low and medium frequency AC applications
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
NPN general purpose transistor in a SOT883 leadless
ultra small plastic package.
PNP complement: 2PA1776M series.
MARKING
TYPE NUMBER
MARKING CODE
2PC4617QM
2PC4617RM
2PC4617SM
D7
D8
D9
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
handbook, halfpage
MAM475
1
2
3
1
3
Bottom view
Fig.1 Simplified outline (SOT883) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
I
CM
collector-emitter voltage
collector current (DC)
peak collector current
50
100
200
V
mA
mA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1.
2.
Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
50
50
5
100
200
200
V
V
V
mA
mA
mA
T
amb
25
°
C
note 1
note 2
65
65
250
430
+150
150
+150
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
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