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參數(shù)資料
| 型號： | 2N918ADCSM |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 15V V(BR)CEO | 3MA I(C) | LLCC |
| 中文描述： | 晶體管|晶體管|一對|叩| 15V的五（巴西）總裁| 3mA的一（c）| LLCC |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 19K |
| 代理商： | 2N918ADCSM |
2N918CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
Parameter
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Test Conditions
I
C
= 3mA
I
C
= 1
μ
A
I
E
= 10
μ
A
V
CB
= 25V
I
C
= 10mA
I
C
= 10mA
I
C
= 500
μ
A
I
C
= 3mA
I
C
= 10mA
I
C
= 4mA
f = 100MHz
I
E
= 0
f = 140kHz
V
EB
= 0.5V
f = 140kHz
I
C
= 1mA
R
G
= 400
I
C
= 6mA
f = 200MHz
I
C
= 8mA
f = 500MHz
Min.
15
30
3
Typ.
Max.
Unit
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
B
= 1mA
I
B
= 1mA
V
CE
= 10V
V
CE
= 1V
V
CE
= 10V
V
CE
= 10V
V
CB
= 10V
V
CB
= 0
I
C
= 0
V
CE
= 6V
f = 60MHz
V
CB
= 12V
V
CB
= 15V
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
NF
Noise Figure
G
pe
Amplifier Power Gain
P
O
η
Power Output
Collector Efficiency
0.010
0.4
1.0
10
20
20
200
600
1.7
3.0
2.0
6.0
15
30
25
V
μ
A
V
—
MHz
pF
pF
dB
mW
%
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