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參數(shù)資料
| 型號： | 2N917A |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal NPN Transistors / Dual Transistors |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 135K |
| 代理商： | 2N917A |
NPN SILICON PLANAR TRANSISTOR
2N917
TO-72
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation @ TA=25oC
Derate Above 25oC
Power Dissipation @ T
C
=25oC
Derate Above 25oC
Operating & Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
VALUE
30
15
3
50
200
1.14
300
1.71
-65 to +200
UNIT
V
V
V
mA
mW
mW/oC
mW
mW/oC
oC
P
D
T
j
, T
stg
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise )
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
SYMBOL TEST CONDITION
V
CEO(SUS)
I
C
=3mA, I
B
=0
V
CBO
I
C
=1
μ
A, I
E
=0
V
EBO
I
E
=10
μ
A, I
C
=0
I
CBO
V
CB
=15V, I
E
=0
VCB=15V, IE=0, TA=150oC
h
FE
I
C
=3mA, V
CE
=1V
V
CE(sat)
I
C
=10mA, I
B
=1mA
V
BE(sat)
I
C
=10mA, I
B
=1mA
MIN
15
30
3.0
-
-
20
-
-
TYP
-
-
MAX
-
-
-
1.0
1.0
200
0.4
1.0
UNIT
V
V
V
nA
μ
A
-
-
-
-
-
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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