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參數(shù)資料
| 型號： | 2N7334R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED PACKAGE-14 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N7334R1 |
2N7334
IRFG110
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
0.13
0.70
0.80
24
0.86
25
250
100
–100
180
82
15
7.5
20
25
40
1
4
1.5
200
0.83
Negligible
4.0
6.0
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 0.6A
VGS = 10V
ID = 1A
VDS = VGS
ID = 250A
VDS ≥ 15V
IDS = 0.60A
VGS = 0
VDS = 0.8VDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 1A
VDS = 0.5VDS
VDD = 50V
ID = 1A
RG = 24
IS = 1.0A
TJ = 25°C
VGS = 0
IF = 1A
TJ = 25°C
di / dt ≤ 100A/sVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
V
V/°C
V
S(
A
nA
pF
nC
ns
A
V
ns
C
nH
BVDSS
BV
DSS
T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5829
Issue 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7334 | 4 CHANNEL, Si, POWER, FET |
| 2N7336-QR-BR1 | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336 | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336-QR-EB | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336 | 1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7335 | 制造商:Microsemi Corporation 功能描述:MOSFET P-CH QUAD 100V MO-036AB |
| 2N7335JANTX | 制造商:INTRSL 功能描述: |
| 2N7336 | 制造商:SAMES 制造商全稱:SAMES 功能描述:14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS |
| 2N7336JANTX | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (MO-036AB) |
| 2N7336JANTXV | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (MO-036AB) |
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