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參數(shù)資料
| 型號(hào)： | 2N7228 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | JEDEC的注冊(cè)? -路高壓功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2N7228 |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 2.35
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
2N7228
MIN
TYP
MAX
12
24
2410
2900
356
530
125
235
103
150
14
21
42
70
14
35
21
190
38
170
12
130
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
θ
JC
R
θ
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
μ
C
MIN
TYP
MAX
12
48
1.7
296
1600
3.5
8.8
UNIT
K/W
3
MIN
TYP
MAX
0.83
31
THERMAL CHARACTERISTICS
0
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7228_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N72281N6036 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72281N6036A | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72281N6036AE3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72281N6036E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
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