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參數(shù)資料
| 型號(hào)： | 2N7002LT1 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT |
| 中文描述： | N溝道增強(qiáng) |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 14K |
| 代理商： | 2N7002LT1 |
Parameter
Thermal Resistance, Junction to Ambient
Min.
Typ.
Max.
625
Unit
°C/W
R
θ
JA
V
(BR)DSS
Gate – Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate – Body Leakage Current
I
DSS
Zero Gate Voltage Drain Current
I
D(on)*
On–State Drain Current
R
DS(on)*
Drain – Source On Resistance
V
DS(on)*
Drain – Source On Voltage
g
FS*
g
OS*
Forward Transconductance
Common Source Output Conductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t
ON
Turn–On Time
t
OFF
Turn–Off Time
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C unless otherwise stated)
Parameter
V
GS
= 0V
V
DS
= V
GS
V
GS
= ±20VV
DS
= 0V
V
DS
= 60V
I
D
= 10
μ
A
I
D
= 0.25mA
V
GS
= 0V
T
CASE
= 125°C
V
DS
≥
2V
DS(ON)
V
GS
= 10V
V
GS
= 5V
I
D
= 50mA
V
GS
= 10V
I
D
= 0.5A
V
GS
= 5V
V
GS
= 10V
I
D
= 0.5A
V
DS
= 10V
V
DS
= 5V
T
CASE
= 125°C
T
CASE
= 125°C
I
D
= 50mA
T
CASE
= 125°C
I
D
= 0.2A
I
D
= 50mA
V
DS
= 25V
V
GS
= 0V
f = 1MHz
V
DD
= 30V
R
L
= 150
I
D
= 0.2A
V
GEN
= 10V
R
G
= 25
60
1
70
2.15
2.5
±100
1
500
500
1000
5
9
2.5
4.4
0.25
1.25
2.2
170
500
7.5
13.5
7.5
13.5
0.375
3.75
6.75
80
16
11
2
50
25
5
7
20
7
20
V
nA
μ
A
mA
V
ms
μ
s
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80
μ
s ,
δ ≤
1%
Test Conditions
Min.
Typ.
Max.
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002LT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 115 mA， 60 Volts |
| 2N7002LT1G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si |
| 2N7002LT1H | 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V |
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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