- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33295 > 2N7002K (VISHAY SILICONIX) 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 PDF資料下載
參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | TO-236, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 112K |
| 代理商： | 2N7002K |
www.vishay.com
2
Document Number: 71333
S-72195-Rev. B, 22-Oct-07
Vishay Siliconix
2N7002K
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤ 300 s duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min
Typa
Max
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 A
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
12.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 10
A
VDS = 0 V, VGS = ± 15 V
1
VDS = 0 V, VGS = ± 10 V
± 150
nA
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 1000
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 50 V, VGS = 0 V
10
VDS = 50 V, VGS = 0 V, TJ = 85 °C
100
VDS = 60 V, VGS = 0 V
1
A
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
800
mA
VGS = 4.5 V, VDS = 10 V
500
Drain-Source On-Resistancea
rDS(on)
VGS = 10 V, ID = 500 mA
2
Ω
VGS = 4.5 V, ID = 200 mA
4
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
100
mS
Diode Forward Voltage
VSD
IS = 200 mA, VGS = 0 V
1.3
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 250 mA
0.4
0.6
nC
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V
f = 1 MHz
30
pF
Output Capacitance
Coss
6
Reverse Transfer Capacitance
Crss
2.5
Switchinga, b, c
Turn-On Time
td(on)
VDD = 30 V, RL = 150 Ω
ID 200 mA, VGEN = 10 V, RG = 10 Ω
25
ns
Turn-Off Time
td(off)
35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002L6327 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002LT1H | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002LT3H | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002L | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002M | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。