參數(shù)資料
型號(hào)： 2N6790
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 3.5A, 200V, 0.800 Ohm,N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 52K
代理商： 2N6790
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
2N6790
200
200
3.5
2.25
14
20
3.5
14
20
0.16
-55 to 150
UNITS
V
V
A
A
A
V
A
A
W
W/
o
C
o
C
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 0.25mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1.0mA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0
I
D
= 3.5A, V
GS
= 10V
I
D
= 2.25A, V
GS
= 10V
I
D
= 2.25A, V
GS
= 10V
I
S
= 3.5A, V
GS
= 0V
I
D
= 2.25A, V
DS
= 5V
V
GS
= 0V, V
DS
= 25V
f = 1MHz
200
-
-
V
Gate to Threshold Voltage
2
-
4
V
Zero-Gate Voltage Drain Current
-
-
250
μ
A
T
C
= 125
o
C
-
-
1000
μ
A
Gate to Source Leakage Current
I
GSS
V
DS(ON)
r
DS(ON)
-
-
100
nA
Drain to Source On-Voltage (Note 2)
-
-
2.8
V
Drain to Source On Resistance
-
.5
0.800
T
C
= 125
o
C
-
-
1.5
Diode Forward Voltage
V
SD
g
fs
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
SOA
0.7
-
1.5
V
Forward Transconductance (Note 2)
1.5
2.25
4.5
S
Input Capacitance
200
450
600
pF
Output Capacitance
60
150
300
pF
Reverse-Transfer Capacitance
15
40
80
pF
Turn-On Delay Time
I
D
= 2.25A
V
GS
74V, R
G
= 50
-
-
40
ns
Rise Time
-
-
50
ns
Turn-Off Delay Time
-
-
50
ns
Fall Time
-
-
50
ns
Safe Operating Area
V
DS
= 160V, I
D
= 125mA
V
DS
= 5.7V, I
D
= 3.5A
20
-
-
W
20
-
-
W
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
6.25
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
175
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= 3.5A, dl
SD
/dt = 100A/ s
TJ = 150
o
C, I
SD
= 3.5A, dl
SD
/dt = 100A/ s
350
-
ns
Reverse Recovered Charge
Q
RR
2.3
-
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2N6790
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