參數(shù)資料
型號(hào): 2N6784
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 89K
代理商: 2N6784
2001 Fairchild Semiconductor Corporation
2N6784 Rev. B
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
0
2
0
2
46
10
4
6
I D
,DRAIN
CURRENT
(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
8
10
PULSE TEST = 80
s
4.0V
VGS = 6V
5V
9V
7V
10V
8V
0
6
8
12
14
2
VSD, GATE TO SOURCE VOLTAGE (V)
410
0.1
1.0
10
I D
,DRAIN
CURRENT
(A)
TJ = 25
oC
TJ = 125
oC
TJ = -55
oC
80
s PULSE TEST
0.5
0.2
5
2
ID, DRAIN CURRENT (A)
r DS(ON)
,ON-ST
A
TE
RESIST
ANCE
(
)
4
3
2
1
0
0246
810
VGS = 20V
VGS = 10V
80
s PULSE TEST
NORMALIZED
ON
RESIST
ANCE
2.2
1.4
1.0
0.6
0.2
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.8
80
VGS = 10V, ID = 1.25A
160
NORMALIZED
DRAIN
T
O
SOURCE
1.25
1.05
0.95
0.85
0.75
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.15
80
160
BREAKDO
WN
V
O
L
T
A
G
E
500
100
0
20
50
C,
CAP
A
CIT
ANCE
(pF)
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
400
200
10
30
40
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
VGS = 0V, f = 1MHz
CRSS
COSS
CISS
2N6784
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