參數資料
型號: 2N6660JAN
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.99A的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET晶體管(最小漏源擊穿電壓60V的,夾斷電流0.99A的N溝道增強型MOSFET的晶體管)
文件頁數: 2/2頁
文件大小: 29K
代理商: 2N6660JAN
2N6660JAN/JANTX/JANTXV
2
Siliconix
P-37515—Rev. A, 04-Jul-94
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
60
75
V
DS
= V
GS
, I
D
= 1 mA
0.8
1.7
2
V
Gate-Threshold Voltage
V
GS(th)
T
C
= –55 C
2.5
T
C
= 125 C
0.3
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
T
C
= 125 C
500
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
A
T
C
= 125 C
100
On-State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
2
A
V
GS
= 5 V, I
D
= 0.3 A
2
5
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
1.3
3
T
C
= 125 C
2.4
5.6
Forward Transconductance
c
g
fs
V
DS
= 7.5 V, I
D
= 0.525 A
170
350
mS
Diode Forward Voltage
V
SD
I
S
= 0.99 A, V
GS
= 0 V
0.7
0.8
1.6
V
Dynamic
Input Capacitance
C
iss
35
50
Output Capacitance
C
oss
V
DS
= 25 V, V
= 0 V
S
f = 1 MHz
25
40
pF
Reverse Transfer Capacitance
C
rss
GS
7
10
Drain-Source Capacitance
C
ds
30
Switching
d
Turn-On Time
t
ON
25
8
10
ns
Turn-Off Time
t
OFF
8.5
10
Notes
a.
b.
c.
d.
e.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
For typical characteristics curves see the 2N6659/2N6660, VQ1004J/P data sheet.
VNDQ06
2%.
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