參數(shù)資料
型號: 2N60L-TN3-T
廠商: 友順科技股份有限公司
英文描述: 2 Amps, 600 Volts N-CHANNEL MOSFET
中文描述: 2安培,600伏特N通道MOSFET
文件頁數(shù): 7/8頁
文件大小: 152K
代理商: 2N60L-TN3-T
2N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-053,E
7 of 8
T Y PICAL CHARACT ERIS T ICS (Cont.)
-100
D
V
D
(
Junction Temperature, T
J
(
)
-50
50
200
V
GS
=10V
I
D
=250
A
100
150
1.2
Breakdown Voltage vs Temperature
0
1.1
1.0
0.9
0.8
-100
D
R
D
Junction Temperature, T
J
(
)
-50
50
200
V
GS
=10V
I
D
=4.05A
100
150
3.0
On-Resistance vs. Temperature
0
2.0
1.0
0.5
0.0
1.5
2.5
10
1
10
0
10
-2
Drain-Source Voltage, V
DS
(V)
D
D
(
Max. Safe Operating Area
10
2
10
1
10
0
D
C
10
-1
100
s
1ms
10
3
Operation in This Area
is Limited by R
DS(on)
10
s
10m
s
T
C
=25
T
J
=125
Single Pulse
D
D
(
Case Temperature, T
C
(
)
75
100
150
Max. Drain Current vs. Case Temperature
0.0
125
50
25
0.5
1.0
1.5
2.0
Square Wave Pulse Duration t
1
(s)
T
J
(
Thermal Response
10
0
10
-5
10
0
10
-1
10
-4
10
-3
10
-2
10
-1
10
1
Single pulse
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t1
t2
JC
(t) = 2.78
Duty Factor, D=t1/t2
T
JM
-T
C
=P
DM
×
/W Max.
JC
(t)
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