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參數(shù)資料
| 型號： | 2N60L-TM3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 中文描述： | 2安培，600伏特N通道MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 2N60L-TM3-R |
2N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-053,E
2 of 8
ABS OLUT E MAX IMUM RAT INGS
(
T
C
= 25
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
RATINGS
600
±30
2.0
2.0
1.26
8.0
4.5
140
4.5
45
0.36
+150
-55 ~ +150
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
T
C
= 25°C
T
C
= 100°C
Drain Current Continuous
I
D
Drain Current Pulsed (Note 2)
I
DP
E
AR
E
AS
dv/dt
Repetitive(Note 2)
Single Pulse(Note 3)
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
T
C
= 25°C
Derate above 25°C
Total Power Dissipation
P
D
Junction Temperature
Storage Temperature
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
, Starting T
J
= 25°C
4. I
SD
≤
2.4A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
T
J
T
STG
T HERMAL DAT A
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
112
112
54
54
12
12
4
4
UNIT
Thermal Resistance Junction-Ambient
θ
JA
Thermal Resistance Junction-Case
θ
Jc
/W
ELECT RICAL CHARACT ERIS T ICS
(T
J
=25
, unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
600
V
μA
μA
nA
nA
10
100
100
-100
Zero Gate Voltage Drain Current
I
DSS
Forward
Reverse
Gate-Body Leakage Current
I
GSS
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV
DSS
/
T
J
I
D
= 250 μA
0.4
V/
V
GS(TH)
R
DS(ON)
g
FS
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
=1A
V
DS
= 50V, I
D
= 1A (Note 1)
2.0
4.0
5
V
S
3.8
2.25
C
ISS
C
OSS
C
RSS
270
40
5
350
50
7
pF
pF
pF
V
DS
=25V, V
GS
=0V, f =1MHz
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| 2N60L-TM3-T | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 2N60L-TN3-R | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 2N60L-TN3-T | 2 Amps, 600 Volts N-CHANNEL MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N60L-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60L-TMA-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60L-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 600 Volts N-CHANNEL MOSFET |
| 2N60L-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 600 Volts N-CHANNEL MOSFET |
| 2N60L-X-T2Q-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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