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參數(shù)資料
| 型號： | 2N60-TN3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 中文描述： | 2安培，600伏特N通道MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 2N60-TN3-T |
2N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-053,E
3 of 8
ELECT RICAL CHARACT ERIS T ICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%
2. Essentially Independent of Operating Temperature
t
D (ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
ns
ns
ns
ns
nC
nC
nC
V
DD
=300V, I
D
=2.4A, R
G
=25
(Note 1,2)
V
DS
=480V, V
GS
=10V, I
D
=2.4A
(Note 1, 2)
V
SD
I
SD
I
SM
t
RR
Q
RR
V
GS
= 0 V, I
SD
= 2.0 A
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
1.4
2.0
8.0
V
A
A
ns
μC
180
0.72
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