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參數(shù)資料
| 型號(hào)： | 2N5794G4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF |
| 封裝： | TO-77, 6 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 2N5794G4 |
Parameter
Test Conditions 1
Min.
Typ.
Max.
Unit
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)EBO
Emitter –Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
IC1-C2
Collector1-2 Leakage Current
hFE*
DC Current Gain
VBE(sat)*
Base – Emitter Saturation Voltage
VCE(sat)*
Collector – Emitter saturation Voltage
fT
Transition Frequency
Ccb
Collector - base Capacitance
Ceb
Emitter- base Capacitance
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC = 10μAIE = 0
IC = 10mA
IB = 0
IE = 10μAIC = 0
VCB = 50V
IE = 0
VEB = 4.0V
IC = 0
VC1-C2 = ±50V
VCE = 10V
IC = 100μA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 1.0V
IC = 150mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 300mA
IC =150mA
IB = 15mA
IC =300mA
IB = 30mA
IC =150mA
IB = 15mA
IC =300mA
IB = 30mA
IC = 20mA
VCE = 20V
f = 100MHz
VCB = 10V IE =0 f =100kHz
VEB = 0.5V IC =0 f =100kHz
VCC = 30V
VBE(off) = 0.5V
IC = 150mA
IB1 =15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
Document Number 6068
Issue 1
2N5794
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
V
nA
—
V
MHz
pF
ns
75
40
6
10
±1.0
35
50
75
50
100
300
40
0.6
1.2
1.8
0.3
0.9
250
8.0
25
15
30
250
60
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
SMALL SIGNAL CHARACTERISTICS
* Pulse Width
≤ 300μs , Duty Cycle < 2%
SWITCHING CHARACTERISTICS
INDIVIDUAL TRANSISTOR CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5794U | 功能描述:兩極晶體管 - BJT Dual NPN Transistor 6 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5794UTX | 制造商:TT Electronics / OPTEK Technology 功能描述:6 PIN, SMTDUAL NPN TRANSISOR 制造商:OPTEK TECHNOLOGY INC 功能描述:6 Pin, SMTdual NPN transisor |
| 2N5794UTXV | 制造商:TT Electronics / OPTEK Technology 功能描述:6 PIN, SMTDUAL NPN TRANSISOR 制造商:OPTEK TECHNOLOGY INC 功能描述:6 Pin, SMTdual NPN transisor |
| 2N5795 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN TO-78 - Bulk |
| 2N5796 | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS TO-78 LAW - Bulk |
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