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參數(shù)資料
| 型號： | 2N5784 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PHILLIPS SCREW; THREAD SIZE: #4-40; LENGTH (INCHES): 1/2"; MATERIAL: STAINLESS STEEL; *100 PIECES PER PACKAGE* |
| 中文描述： | 3500 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 2N5784 |
Prelim. 8/96
2N5784
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
V
CER(sus)
V
CEO(sus)
V
EBO
I
C
I
B
P
D
Collector – Base Voltage
Collector – Emitter Sustaining Voltage
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Collector Current
Total Device Dissipation
R
BE
= 100
W
T
A
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
P
D
Total Device Dissipation
T
J
, T
STG
T
L
Operating Junction and Storage Temperature Range
Lead temperature,
3
1
/
32
”
(0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE
PIN 2 – Base
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter
PIN 3 – Collector
(0.89
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
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|---|---|
| 2N5785 | Small Signal Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5784_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N578489 | 制造商:n/a 功能描述:2N5784 |
| 2N5784SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5784SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N5785 | 功能描述:兩極晶體管 - BJT NPN Switch SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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