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參數(shù)資料
| 型號： | 2N5684 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 270K |
| 代理商： | 2N5684 |
2N5684 2N5685 2N5686
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Note 1)
2N5685
(IC = 0.2 Adc, IB = 0)
2N5684, 2N5686
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N5685
(VCE = 40 Vdc, IB = 0)
2N5684, 2N5686
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5685
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5684, 2N5686
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N5685
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N5684, 2N5686
ICEX
—
2.0
10
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5685
(VCB = 80 Vdc, IE = 0)
2N5684, 2N5686
ICBO
—
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)
hFE
15
5.0
60
—
—
Collector–Emitter Saturation Voltage (Note 1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 10 Adc)
VCE(sat)
—
1.0
5.0
Vdc
Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
—
2.0
Vdc
Base–Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc)
VBE(on)
—
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
—
MHz
Output Capacitance
2N5684
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5685, 2N5686
Cob
—
2000
1200
pF
Small–Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
15
—
* Indicates JEDEC Registered Data.
Note 1: Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
1.0
0.5
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(
s)
0.7
0.5
0.2
0.07
0.05
0.02
0.01
0.7 1.0
2.0
3.0
5.0 7.0
10
50
TJ = 25°C
IC/IB = 10
VCC = 30 V
0.03
0.3
30
0.1
20
2N5684 (PNP)
2N5685, 2N5686 (NPN)
tr
td
+ 2.0 V
0
tr ≤
20 ns
–12 V
10 to 100
s
DUTY CYCLE
≈ 2.0%
RB
RL
VCC
– 30 V
TO SCOPE
tr ≤ 20 ns
VCC
– 30 V
TO SCOPE
tr ≤ 20 ns
RL
RB
+10 V
0
–12 V
10 to 100
s
DUTY CYCLE
≈ 2.0%
tr ≤ 20 ns
VBB
+ 4.0 V
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5738.MOD | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5738 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5739 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5684/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current Complementary Silicon Power Transistors |
| 2N5684_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
| 2N5684G | 功能描述:兩極晶體管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5684G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| 2N5685 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N5685 GP BJTs 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
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