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參數資料
| 型號： | 2N5551L-X-T92-B |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 中文描述： | 高壓開關晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2N5551L-X-T92-B |
2N5551
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-002.B
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
RATINGS
180
160
6
625
500
600
+150
-55 ~ +150
UNIT
V
V
V
mW
mW
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Dissipation
Collector Current
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TO-92
SOT-89
P
C
I
C
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
TEST CONDITIONS
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=4V,I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0 f=1MHz
I
C
=0.25mA, V
CE
=5V
R
S
=1k
, f=10Hz ~ 15.7kHz
MIN
180
160
6
80
80
80
TYP
160
MAX
50
50
400
UNIT
V
V
V
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.15
0.2
1
1
300
6.0
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
Current Gain Bandwidth Product
Output Capacitance
f
T
C
ob
100
MHz
pF
Noise Figure
NF
8
dB
Note: Pulse test: PW<300μs, Duty cycle<2%
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
C
80-170
150-240
200-400
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| 2N5551L-X-T92-K | HIGH VOLTAGE SWITCHING TRANSISTOR |
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| 2N5551-A-AB3-R | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-A-T92-B | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-A-T92-K | HIGH VOLTAGE SWITCHING TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5551L-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551N | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
| 2N5551RL1 | 功能描述:兩極晶體管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5551RL1G | 功能描述:兩極晶體管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5551RLRA | 功能描述:兩極晶體管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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