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參數(shù)資料
| 型號： | 2N549 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5 |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 800mA的一（c）|至5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 67K |
| 代理商： | 2N549 |
1997. 5. 13
2/2
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
)
2N5400
* Pulse Test : Pulse Width
300
S, Duty Cycle
2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-100V, I
E
=0
-
-
-100
nA
V
CB
=-100V, I
E
=0, Ta=100
-
-
-100
A
Emitter Cut-off Current
I
EBO
V
EB
=-3V, I
C
=0
-
-
-50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-0.1mA, I
E
=0
-130
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-120
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
-5
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=-5V, I
C
=-1mA
30
-
-
h
FE
(2)
V
CE
=-5V, I
C
=-10mA
40
-
180
h
FE
(3)
V
CE
=-5V, I
C
=-50mA
40
-
-
Collector-Emitter *
Saturation Voltage
V
CE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-0.2
V
V
CE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.5
Base-Emitter *
Saturation Voltage
V
BE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-1.0
V
V
BE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-1.0
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA, f=100MHz
100
-
400
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
6
pF
Small-Signal Current Gain
h
fe
V
CE
=-10V, I
C
=-1mA, f=1kHz
30
-
200
Noise Figure
NF
V
CE
=-5V, I
C
=-250
A
Rg=1k
, f=10Hz
15.7kHz
-
-
8
dB
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