參數(shù)資料
型號(hào): 2N5433
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最大導(dǎo)通電阻7Ω的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)(最大導(dǎo)通電阻7Ω的?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁數(shù): 2/5頁
文件大小: 62K
代理商: 2N5433
2N5432/5433/5434
2
Siliconix
S-52424—Rev. E, 14-Apr-97
Specifications
a
Limits
2N5432
2N5433
2N5434
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–32
–25
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 5 V, I
D
= 3 nA
–4
–10
–3
–9
–1
–4
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
150
100
30
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–5
–200
–200
–200
pA
T
A
= 150 C
–10
–200
–200
–200
nA
Gate Operating Current
d
I
G
V
DG
= 10 V, I
D
= 10 mA
–10
pA
Drain Cutoff Current
D( ff)
I
D(off)
V
DS
= 5 V, V
GS
= –10 V
10
200
200
200
T
A
= 150 C
20
200
200
200
nA
Drain-Source On-Voltage
V
DS(on)
= 0 V I
V
GS
= 0 V, I
D
= 10 mA
50
70
100
mV
Drain-Source On-Resistance
r
DS(on)
2
5
7
10
Gate-Source Forward Voltage
d
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
d
g
fs
V
DS
= 5 V, I
D
= 10 mA
f = 1 kHz
17
mS
Common-Source
Output Conductance
d
g
os
600
S
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
5
7
10
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
= –10 V
f = 1 MHz
20
30
30
30
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
11
15
15
15
Equivalent Input
Noise Voltage
d
e
n
V
DS
= 5 V, I
D
= 10 mA
f = 1 kHz
3.5
nV
Hz
Switching
Turn On Time
Turn-On Time
c
t
d(on)
2
4
4
4
t
r
V
DD
= 1.5 V, V
GS( )
= 0 V
S i hi
See Switching Circuit
0.5
1
1
1
ns
Turn-Off Time
c
t
d(off)
4
6
6
6
t
f
18
30
30
30
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NIP
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