參數(shù)資料
型號(hào): 2N5415CSM4G4
廠商: SEMELAB LTD
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC, LCC3-4
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 76K
代理商: 2N5415CSM4G4
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9226
Issue 1
Page 1 of 3
2N5415CSM4
2N5416CSM4
Silicon Planar PNP Transistor
Hermetic Ceramic Surface Mounted Package.
Hi-Rel Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
2N5415
2N5416
VCBO
Collector – Base Voltage
-200V
-350V
VCEO
Collector – Emitter Voltage
-200V
-300V
VEBO
Emitter – Base Voltage
-4V
-6V
IC
Continuous Collector Current
1.0A
IB
Base Current
0.5A
PD
Total Power Dissipation at
TA = 25°C
1.0W
TJ
Junction Temperature Range
175°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols
Parameters
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
150
°C/W
相關(guān)PDF資料
PDF描述
2N5416CSM4G4 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5416CSM4-JQR-B 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5415 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5416 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5416S 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
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