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參數(shù)資料
| 型號： | 2N5401-C-AB3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 中文描述： | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2N5401-C-AB3-R |
2N5401
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-001,D
ABS OLUT E MAX IMUM RAT ING
(Ta=25
°
C , unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
-160
-150
-5
-600
625
500
+150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
TO-92
SOT-89
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
TEST CONDITIONS
Ic = -100
μ
A, I
E
= 0
Ic = -1mA, I
B
= 0
I
E
= -10
μ
A, Ic = 0
V
CB
= -120V, I
E
= 0
V
EB
= -3V, Ic = 0
V
CE
= -5V, Ic = -1mA
V
CE
= -5V, Ic = -10mA
V
CE
= -5V, Ic = -50mA
Ic = -10mA, I
B
= -1mA
Ic = -50mA, I
B
= -5mA
Ic = -10mA, I
B
= -1mA
Ic = -50mA, I
B
= -5mA
V
CE
= -10V, Ic = -10mA
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
Ic = -0.25mA, V
CE
= -5V
Rs = 1k
, f = 10Hz ~ 15.7kHz
MIN
-160
-150
-6
80
80
80
TYP
MAX
-50
-50
UNIT
V
V
V
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
-0.5
-1
-1
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
Current Gain Bandwidth Product
f
T
100
400
MHz
Output Capacitance
Cob
6.0
pF
Noise Figure
NF
8
dB
Note: Pulse test: PW<300
μ
s, Duty Cycle<2%
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
C
80-170
150-240
200-400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5401-C-T92-B | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-C-T92-K | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-C-T92-R | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-AB3-B | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-AB3-K | HIGH VOLTAGE SWITCHING TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5401CSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N5401-C-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-C-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-C-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401CTA | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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