參數(shù)資料
型號(hào): 2N5339
廠商: 意法半導(dǎo)體
英文描述: Silicon NPN Transistor(硅NPN晶體管)
中文描述: 硅NPN晶體管(硅npn型晶體管)
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 66K
代理商: 2N5339
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
29.2
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CB
= 100 V
10
μ
A
I
CEO
V
CE
= 90 V
100
μ
A
I
CEX
V
CE
= 90 V
V
CE
= 90 V T
C
= 150
o
C
V
EB
= -6 V
10
1
μ
A
mA
μ
A
I
EBO
100
I
C
= 50 mA
100
V
I
C
= 2 A I
B
= 200 mA
I
C
= 5 A I
B
= 500 mA
I
C
= 2 A I
B
= 200 mA
I
C
= 5 A I
B
= 500 mA
0.7
1.2
V
V
1.2
1.8
V
V
I
C
= 0.5 A V
CE
= 2 V
I
C
= 2 A V
CE
= 2 V
I
C
= 5 A V
CE
= 2 V
I
C
= 0.5 A V
CE
= 10 V
I
E
= 0 V
CB
= 10 V f = 0.1 MHz
60
60
40
240
f
T
Transition Frequency
30
MHz
C
CBO
Collector-Base
Capacitance
Turn on Time
250
pF
t
on
t
s
t
f
I
C
= 2 A V
CC
= 40 V I
B1
= 0.2 A
I
C
= 2 A V
CC
= 40 V
I
B1
= -I
B2
= 0.2A
200
ns
μ
s
ns
Storage Time
2
Fall Time
200
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
2N5339
2/4
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