參數(shù)資料
型號： 2N5321
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Small Signal Transistors
中文描述： 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝： TO-39, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 67K
代理商： 2N5321
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 80 V for
2N5320
V
CB
= 60 V for
2N5321
0.5
5
μ
A
μ
A
μ
A
μ
A
I
EBO
Collector Cut-off
Current (I
C
= 0)
V
EB
= 5 V for
2N5320
V
EB
= 4 V for
2N5321
0.1
0.5
V
(BR)CEV
Collector-Emitter
Breakdown Voltage
(V
BE
= 1.5V)
I
C
= 100
μ
A
for
2N5320
for
2N5321
100
75
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
for
2N5320
for
2N5321
75
50
V
V
I
E
= 100
μ
A
for
2N5320
for
2N5321
I
C
= 500 mA I
B
= 50 mA
for
2N5320
for
2N5321
6
5
V
V
0.5
0.8
V
V
V
BE
Base-Emitter Voltage
I
C
= 500 mA V
CE
= 4 V
for
2N5320
for
2N5321
1.1
1.4
V
V
h
FE
DC Current Gain
for
2N5320
I
C
= 500 mA V
CE
= 4 V
I
C
= 1 A V
CE
= 2 V
for
2N5321
I
C
= 500 mA V
CE
= 4 V
I
C
= 50 mA V
CE
= 4 V f = 10 MHz
30
10
40
130
250
f
T
Transition Frequency
50
MHz
t
on
Turn-on Time
I
C
= 500 mA V
CC
= 30 V
I
B1
= 50 mA
I
C
= 500 mA V
CC
= 30 V
I
B1
= -I
B2
= 50 mA
80
ns
t
off
Turn-off Time
800
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1 %
2N5320/2N5321
2/4
相關PDF資料
PDF描述
2N5320 10 Watt NPN-PNP Silicon Power
2N5321 10 Watt NPN-PNP Silicon Power
2N5329 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | TO-210AC
SVT250-3C Silicon Bridge Rectifiers
SVT250-5C TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 10A I(C) | TO-3
相關代理商/技術參數(shù)
參數(shù)描述
2N5322 功能描述:兩極晶體管 - BJT PNP 75V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5322_03 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED MEDIUM VOLTAGE SWITCHES
2N5322_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS
2N5322MC 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-39
2N5323 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 75V 2A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 75V 2A 3PIN TO-5 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N Series 50 V 2 A PNP Through Hole Silicon Switching Transistor - TO-39 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -50V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:10W; DC Collector Current:2A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes
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