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參數(shù)資料
| 型號： | 2N5320 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 10 Watt NPN-PNP Silicon Power |
| 中文描述： | 10瓦特npn型，進(jìn)步黨穎電 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2N5320 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 80 V for
2N5320
V
CB
= 60 V for
2N5321
0.5
5
μ
A
μ
A
μ
A
μ
A
I
EBO
Collector Cut-off
Current (I
C
= 0)
V
EB
= 5 V for
2N5320
V
EB
= 4 V for
2N5321
0.1
0.5
V
(BR)CEV
Collector-Emitter
Breakdown Voltage
(V
BE
= 1.5V)
I
C
= 100
μ
A
for
2N5320
for
2N5321
100
75
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
for
2N5320
for
2N5321
75
50
V
V
I
E
= 100
μ
A
for
2N5320
for
2N5321
I
C
= 500 mA I
B
= 50 mA
for
2N5320
for
2N5321
6
5
V
V
0.5
0.8
V
V
V
BE
Base-Emitter Voltage
I
C
= 500 mA V
CE
= 4 V
for
2N5320
for
2N5321
1.1
1.4
V
V
h
FE
DC Current Gain
for
2N5320
I
C
= 500 mA V
CE
= 4 V
I
C
= 1 A V
CE
= 2 V
for
2N5321
I
C
= 500 mA V
CE
= 4 V
I
C
= 50 mA V
CE
= 4 V f = 10 MHz
30
10
40
130
250
f
T
Transition Frequency
50
MHz
t
on
Turn-on Time
I
C
= 500 mA V
CC
= 30 V
I
B1
= 50 mA
I
C
= 500 mA V
CC
= 30 V
I
B1
= -I
B2
= 50 mA
80
ns
t
off
Turn-off Time
800
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1 %
2N5320/2N5321
2/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5321 | 10 Watt NPN-PNP Silicon Power |
| 2N5329 | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | TO-210AC |
| SVT250-3C | Silicon Bridge Rectifiers |
| SVT250-5C | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 10A I(C) | TO-3 |
| SVT300-3C | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5320 | 制造商:SPC Multicomp 功能描述:Bipolar Transistor |
| 2N5320_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5320MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| 2N5321 | 功能描述:兩極晶體管 - BJT TO-39 NPN GEN PUR SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5322 | 功能描述:兩極晶體管 - BJT PNP 75V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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