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參數(shù)資料
| 型號： | 2N5237S |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | 2N5237S |
6 Lake Street, Lawrence, MA 01841
3/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N4150
2N4150S
2N4150
2N4150S
2N4150
2N4150S
Unit
Collector-Emitter Voltage
VCEO
70
120
170
Vdc
Collector-Base Voltage
VCBO
100
150
200
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Collector Current
IC
10
Adc
Total Power Dissipation
@ TA = 25
0C
@ TC = 100
0C
PT
1.0
5.0
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
0.020
0.175
0C/mW
1)
Derate linearly 5.7 mW/
0C for TA > 250C
2)
Derate linearly 50 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 Adc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CBO
100
150
200
Vdc
Emitter-Base Breakdown Voltage
IE = 10 Adc
V(BR)EBO
7.0
Vdc
Collector-Emitter Breakdown Voltage
IC = 0.1 Adc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CEO
70
120
170
Vdc
TECHNICAL DATA
2N4150, 2N4150S JAN, JTX, JTXV
2N5237, 2N5237S JAN, JTX, JTXV
2N5238, 2N5238S JAN, JTX, JTXV
Processed per MIL-PRF-19500/394
NPN SILICON POWER TRANSISTOR
2N4150, 2N5237,
2N5238
TO- 5
2N4150S, 2N5237S,
2N5238S
TO-39 (TO-205AD)
MIL-PRF
QPL
DEVICES
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