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參數(shù)資料
| 型號(hào)： | 2N5154S1 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMD.5, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | 2N5154S1 |
2N5154HR
Electrical characteristics
Doc ID 15387 Rev 2
3/10
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 5.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off
current (IE = 0)
VCB = 60 V
Tamb = 150 °C
1
10
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
VEB = 6 V
1
A
mA
ICEO
Collector cut-off
current (IB = 0)
VCE = 40 V
50
A
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 2%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 100 mA
80
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 5 A
IB = 0.5 A
IC = 2.5 A
IB = 250 mA
1.5
1.45
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 2.5 A
IB = 0.25 A
IC = 5 A
IB = 0.5 A
1.45
2.2
V
hFE
(1)
DC current gain
IC = 50 mA
VCE = 5 V
IC = 2.5 A
VCE = 5 V
IC = 5 A
VCE = 5 V
IC = 2.5 A
VCE = 5 V
Tamb = - 55 °C
50
70
40
35
200
hfe
AC forward current
transfer ratio
VCE = 5 V
IC = 500 mA
f = 20 MHz
3.5
COBO
Output capacitance
IE = 0
VCB = 10 V
f = 1 MHz
250
pF
ton
Turn-on time
VCC = 30 V
VBB = 4 V
Vin
51 V
IC = 5 A
IB1 = - IB2 = 0.5 A
0.5
s
toff
Turn-off time
VCC = 30 V
VBB = 4 V
Vin
51 V
IC = 5 A
IB1 = - IB2 = 0.5 A
1.3
s
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