- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33262 > 2N5154N1B (SEMELAB LTD) 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N5154N1B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 封裝： | HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 336K |
| 代理商： | 2N5154N1B |
SILICON EPITAXIAL
NPN TRANSISTOR
2N5154N1B
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9104
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage
IC = 10mA
80
V
VCE = 60V
VBE = 0
1.0
A
ICES
Collector Cut-Off Current
VCE = 100V
VBE = 0
1.0
mA
VCE = 60V
VBE = -2V
ICEX
Collector Cut-Off Current
TC = 150°C
25
ICEO
Collector Cut-Off Current
VCE = 40V
IB = 0
50
VEB = 4V
IC = 0
1.0
A
IEBO
Emitter Cut-Off Current
VEB = 5.5V
IC = 0
1.0
mA
IC = 50mA
VCE = 5V
50
IC = 2.5A
VCE = 5V
70
200
TC = -55°C
25
hFE
(2)
Forward-current transfer
ratio
IC = 5A
VCE = 5V
40
-
VBE
(2)
Base-Emitter Voltage
IC = 2.5 A
VCE = 5V
1.45
IC = 2.5A
IB = 250mA
1.45
VBE(sat)
(2)
Collector-Emitter Saturation
Voltage
IC = 5A
IB = 500mA
2.2
IC = 2.5A
IB = 250mA
0.75
VCE(sat)
(2)
Base-Emitter Saturation
Voltage
IC = 5A
IB = 500mA
1.5
V
DYNAMIC CHARACTERISTICS
IC = 500mA
VCE = 5V
hfe
Magnitude of common-
emitter, small-signal short-
circuit, forward-current
transfer ratio
f = 20MHz
1.2
-
IC = 100mA
VCE = 5V
hfe
Small-Signal Current Gain
f = 1.0 KHz
50
-
VCB = 10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
250
pF
ton
Turn-On Time
VCC = 30V
IC = 5A
0.5
ts
Storage Time
IB1 = 500mA
IB2 = - IB1
1.4
tf
Fall Time
RL = 6
0.5
toff
Turn-Off Time
1.5
S
Notes
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5154S1 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5154SHR | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5154SMD-JQRR4 | 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2N5154SMD-JQR-AR4 | 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2N5154SMD | 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5154N1B_11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5154N2A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5154N2A_11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5154S | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO39 |
| 2N5154SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN BIPOLAR TRANSISTOR IN A |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。