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參數(shù)資料
| 型號： | 2N5153JV |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 407K |
| 代理商： | 2N5153JV |
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5153
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 100 mA
80
Volts
Collector-Emitter Cutoff Current
ICES1
VCE = 60 Volts
1
A
Collector-Emitter Cutoff Current
ICES2
VCE = 100 Volts
1
mA
Collector-Emitter Cutoff Current
ICEO
VCE = 40 Volts
50
A
Collector-Emitter Cutoff Current
ICEX
VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C
500
nA
Emitter-Base Cutoff Current
IEBO1
VEB = 4 Volts
1
A
Emitter-Base Cutoff Current
IEBO1
VEB = 5.5 Volts
1
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage
VBE
VCE = 5 Volts, IC = 2.5 mA
1.45
Volts
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
7
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 5 Volts, IC = 100 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
f = 1 MHz
250
pF
Switching Characteristics
Saturated Turn-On Time
Storage Time
Fall Time
Saturated Turn-Off Time
tON
ts
tf
tOFF
IC = 5 A, IB1= 500 mA,
IB2= -500 mA, VBEoff = 3.7 V,
RL = 6
0.5
1.4
0.5
1.5
s
Semicoa Corporation
Copyright
2010
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