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參數(shù)資料
| 型號： | 2N5116 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel JFET Switch |
| 中文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2N5116 |
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
Part Number
V
GS(off)
(V)
r
DS(on)
Max ( )
I
D(off)
Typ (pA)
t
ON
Max (ns)
2N5114
5 to 10
75
–10
16
2N5115
3 to 6
100
–10
30
2N5116
1 to 4
150
–10
42
Low On-Resistance: 2N5114 <75
Fast Switching—t
ON
: 16 ns
High Off-Isolation—I
D(off)
: –10 pA
Low Capacitance: 6 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
The
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
2N5114JAN/JANTX/JANTXV
series
consists
of
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
2
3
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
30 V
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
–50 mA
–65 to 200 C
–55 to 200 C
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . . . . . .
500 mW
Notes
a.
Derate 3 mW/ C above 25 C
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| 2N5116 | P-Channel JFET(最大導通電阻150Ω，夾斷電流-10pA的P溝道結(jié)型場效應管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5116_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET |
| 2N5116-E3 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5116JAN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel JFETs |
| 2N5116JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans JFET P-CH 3-Pin TO-206AA 制造商:Vishay Siliconix 功能描述:TRANS JFET P-CH 3PIN TO-206AA - Bulk |
| 2N5116JANTX | 制造商:Vishay Siliconix 功能描述:P CHANNEL JFET, 30V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-5mA; Zero Gate Voltage Drain Current Idss Max:-25mA; Gate-Source Cutoff Voltage Vgs(off) Max:4V; No. of Pins:3 ;RoHS Compliant: No |
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