參數(shù)資料
型號(hào): 2N5088
英文描述: PNP/NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
中文描述: 進(jìn)步黨/ NPN硅自動(dòng)對(duì)焦低噪聲小信號(hào)晶體管
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 49K
代理商: 2N5088
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN general purpose transistor
2N5088
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
35
30
4.5
100
200
200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 20 V
I
C
= 0; V
EB
= 4.5 V
C
= 100
μ
A; V
CE
= 5 V
I
C
= 1 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
300
350
300
50
50
50
900
500
800
4
12
3
nA
nA
V
CEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
mV
mV
pF
pF
MHz
dB
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 500
μ
A; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 10 Hz to 15.7 kHz
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