參數(shù)資料
型號(hào): 2N5064RLRM
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Silicon Controlled Rectifiers
中文描述: 0.8 A, 200 V, SCR, TO-92
封裝: PLASTIC, CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 10/12頁
文件大?。?/td> 199K
代理商: 2N5064RLRM
Sensitive SCRs
Data Sheets
http://www.littelfuse.com
+1 972-580-7777
E5 - 10
2004 Littelfuse, Inc.
Thyristor Product Catalog
Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current
Figure E5.18 Normalized DC Latching Current versus Case Temperature
Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and
Current Measurement
Note: V1 — 0 V to 10 V dc meter
V
GT
— 0 V to 1 V dc meter
I
G
— 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
To measure gate trigger voltage and current, raise gate voltage
(V
GT
) until meter reading V1 drops from 6 V to 1 V. Gate trigger
voltage is the reading on V
GT
just prior to V1 dropping. Gate trig-
ger current I
GT
can be computed from the relationship
where I
G
is reading (in amperes) on meter just prior to V1 drop-
ping.
Note: I
GT
may turn out to be a negative quantity (trigger current
flows out from gate lead). If negative current occurs, I
GT
value is
not a valid reading. Remove 1 k resistor and use I
G
as the more
correct I
GT
value. This will occur on 12
μ
A gate products.
0
2
4
6
8
10
0
2
4
6
8
10
12
RMS On-state Current [I
T(RMS)
] – Amps
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
A
P
D
]
6 A to 10 A
TO-220, TO-202,
TO-251, and TO-252
-65
-15
+25
+65
+110 +125
-40
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Case Temperature (TC) – C
R
I
I
See General Notes for specific device
operating temperature range.
V1
6 V
DC
+
100
D.U.T.
Reset
Normally-closed
Pushbutton
1 k
(1%)
I
G
V
GT
100
I
GT
R1
IN4001
IGT
IG
V
1000
------------
Amps
=
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