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參數(shù)資料
| 型號： | 2N5064 |
| 英文描述： | Sensitive SCRs |
| 中文描述： | 敏感可控硅 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 199K |
| 代理商： | 2N5064 |
Sensitive SCRs
Data Sheets
http://www.littelfuse.com
+1 972-580-7777
E5 - 10
2004 Littelfuse, Inc.
Thyristor Product Catalog
Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current
Figure E5.18 Normalized DC Latching Current versus Case Temperature
Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and
Current Measurement
Note: V1 — 0 V to 10 V dc meter
V
GT
— 0 V to 1 V dc meter
I
G
— 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
To measure gate trigger voltage and current, raise gate voltage
(V
GT
) until meter reading V1 drops from 6 V to 1 V. Gate trigger
voltage is the reading on V
GT
just prior to V1 dropping. Gate trig-
ger current I
GT
can be computed from the relationship
where I
G
is reading (in amperes) on meter just prior to V1 drop-
ping.
Note: I
GT
may turn out to be a negative quantity (trigger current
flows out from gate lead). If negative current occurs, I
GT
value is
not a valid reading. Remove 1 k resistor and use I
G
as the more
correct I
GT
value. This will occur on 12
μ
A gate products.
0
2
4
6
8
10
0
2
4
6
8
10
12
RMS On-state Current [I
T(RMS)
] – Amps
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
A
P
D
]
6 A to 10 A
TO-220, TO-202,
TO-251, and TO-252
-65
-15
+25
+65
+110 +125
-40
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Case Temperature (TC) – C
R
I
I
See General Notes for specific device
operating temperature range.
V1
6 V
DC
+
–
100
D.U.T.
Reset
Normally-closed
Pushbutton
1 k
(1%)
I
G
V
GT
100
I
GT
R1
IN4001
IGT
IG
V
1000
------------
Amps
–
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5064 | SCRs (Silicon Controlled Rectifiers) |
| 2N5064 | 0.8 to 110 Amperes RMS 15 to 1200 Volts |
| 2N5064RLRMG | Sensitive Gate Silicon Controlled Rectifiers |
| 2N5064RLRA | Sensitive Gate Silicon Controlled Rectifiers |
| 2N5064RLRM | Sensitive Gate Silicon Controlled Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5064,112 | 功能描述:SCR BULK SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064G | 功能描述:SCR THY 0.8A 200V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064RLRA | 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064RLRAG | 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5064RLRM | 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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