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參數(shù)資料
| 型號(hào)： | 2N5039 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2N5039 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: D
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N5038
2N5039
Units
Collector-Emitter Voltage
VCEO
90
75
Vdc
Collector-Base Voltage
VCBO
150
125
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
5.0
Adc
Collector Current
IC
20
Adc
Total Power Dissipation @ TC = 25
0C (1)
PT
140
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.25
0C/W
1) Derate linearly 800 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5038
2N5039
V(BR)CEO
90
75
Vdc
Emitter-Base Breakdown Voltage
IE = 25 mAdc
V(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current
VCE = 150 Vdc
2N5038
VCE = 125 Vdc
2N5039
ICBO
1.0
Adc
Collector-Base Cutoff Current
VCE = 70 Vdc
2N5038
VCE = 55 Vdc
2N5039
ICEO
1.0
Adc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
1.0
Adc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc VCE = 100 Vdc
2N5038
VBE = -1.5 Vdc VCE = 85 Vdc
2N5039
ICEX
5.0
Adc
TECHNICAL DATA
TO-3 (TO-204AA)
2N5038 JAN, JTX, JTXV
2N5039 JAN, JTX, JTXV
Processed per MIL-PRF-19500/439
NPN SILICON HIGH-POWER TRANSISTOR
MIL-PRF
QPL
DEVICES
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|---|---|
| 2N5039JANTX | 制造商:SBD ELECTRONIC SYSTEMS IN 功能描述: |
| 2N5039JTX | 制造商:SBD ELECTRONIC SYSTEMS IN 功能描述: |
| 2N5039JX | 制造商:SBD ELECTRONIC SYSTEMS IN 功能描述: |
| 2N5039SX | 制造商:SBD ELECTRONIC SYSTEMS IN 功能描述: |
| 2N5040 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-222AB |
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