參數(shù)資料
型號: 2N4898X
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
中文描述: 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-66
文件頁數(shù): 2/2頁
文件大?。?/td> 14K
代理商: 2N4898X
2N4898X
2N4899X
2N4900X
Prelim. 9/96
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Collector – Emitter Cut-off Current
Test Conditions
V
CE
= –30V
V
CE
= V
(BR)CEO
Min.
Typ.
Max. Units
0.50
100
1.0
0.1
I
B
= 0
V
BE
= –1.5V
T
C
= 150°C
I
E
= 0
V
CB
= V
(BR)CBO
V
CE
= V
(BR)CEO
V
BE
= 0
I
C
= –1A
I
B
= –0.1A
I
C
= –1A
I
C
= –1A
V
CE
= –1V
V
CE
= –1V
V
CE
= –1V
V
CE
= –10V
f = 1 MHz
I
B
= –0.1A
V
CE
= –1V
I
C
= –50mA
I
C
= –500mA
I
C
= –1A
I
C
= –250mA
I
CEO
I
CEX
Collector – Emitter Cut-off Current
I
CBO
I
CES
Collector – Base Cut-off Current
Collector – Emitter Leakage
Current
Collector – Emitter Saturation
Voltage
Base – Emitter Saturation Voltage
Base – Emitter Voltage
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
DC Current Gain
f
t
Transition Frequency
100
–0.60
–1.3V
–1.3V
40
20
10
130
3.0
mA
μ
A
mA
mA
μ
A
V
V
V
MHz
Electrical Characteristics
(T
C
= 25°C unless otherwise stated.)
* Pulse Test: t
p
= 300
μ
s,
δ
= 2%.
相關(guān)PDF資料
PDF描述
2N4900X PNP Epitaxial Base Medium Power Transistor(TO-66 Metal Package)(中等功率PNP外延晶體管(TO-66 金屬封裝))
2N4898X PNP Epitaxial Base Medium Power Transistor(TO-66 Metal Package)(中等功率PNP外延晶體管(TO-66 金屬封裝))
2N4899X PNP Epitaxial Base Medium Power Transistor(TO-66 Metal Package)(中等功率PNP外延晶體管(TO-66 金屬封裝))
2N4899X PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
2N4900X PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
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