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參數(shù)資料
| 型號(hào)： | 2N4856A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流50mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 40V的，最小飽和漏極電流為50mA的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2N4856A |
2N4856A/4857A/4858A
2
Siliconix
S-52424—Rev. C, 14-Apr-97
Specifications
a
Limits
2N4856A
2N4857A
2N4858A
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–55
–40
–40
–40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.5 nA
–4
–10
–2
–6
–0.8
–4
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
50
20
100
8
80
mA
Gate Reverse Current
I
GSS
V
GS
= –20 V, V
DS
= 0 V
–5
–250
–250
–250
pA
T
A
= 150 C
–13
–500
–500
–500
nA
Gate Operating Current
d
I
G
V
DG
= 15 V, I
D
= 10 mA
–5
pA
Drain Cutoff Current
D( ff)
I
D(off)
V
DS
= 15 V, V
GS
= –
V
5
250
250
250
T
A
= 150 C
13
500
500
500
nA
I
D
= 5 mA
0.25
0.5
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 10 mA
0.35
0.5
V
I
D
= 20 mA
0.5
0.75
Drain-Source On-Resistance
d
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
25
40
60
Gate-Source Forward Voltage
d
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
d
g
fs
V
DS
= 20 V, I
D
= 1 mA
f = 1 kHz
6
mS
Common-Source
Output Conductance
d
g
os
25
S
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
25
40
60
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
= –10 V
f = 1 MHz
7
10
10
10
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
3
4
3.5
3.5
Equivalent Input
Noise Voltage
d
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
3
nV
√
Hz
Switching
Turn On Time
Turn-On Time
t
d(on)
V
DD
= 10 V, V
GSH
= 0 V
See Switching Circuit
10 V V
2
5
6
8
t
r
2
3
4
8
ns
Turn-Off Time
t
OFF
12
20
40
80
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
100 s duty cycle
10%.
This parameter not registered with JEDEC.
NCB
相關(guān)PDF資料 |
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| 2N4857A | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流20mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2N4858A | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流8mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2N4856 | N-Channel JFET(最小柵源擊穿電壓-40V，最大導(dǎo)通電阻25Ω的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2N4857 | N-Channel JFET(最小柵源擊穿電壓-40V，最大導(dǎo)通電阻40Ω的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2N4858 | N-Channel JFET(最小柵源擊穿電壓-40V，最大導(dǎo)通電阻60Ω的N溝道結(jié)型場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4856A-E3 | 功能描述:JFET 40V 5pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4856JAN | 制造商:Harris Corporation 功能描述: |
| 2N4856JAN01 | 制造商:Vishay Intertechnologies 功能描述:Trans JFET N-CH 3-Pin TO-206AA |
| 2N4856JAN02 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-206AA - Bulk 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 50MA TO-18 |
| 2N4856JANTX | 制造商: 功能描述: 制造商:undefined 功能描述: 制造商:Vishay Intertechnologies 功能描述:N CHANNEL JFET, -40V, TO-206AA, Transistor Type:JFET, Breakdown Voltage Vbr:-40V 制造商:Vishay Siliconix 功能描述:N CHANNEL JFET, -40V, TO-206AA, Transistor Type:JFET, Breakdown Voltage Vbr:-40V, Zero Gate Voltage Drain Current Idss Min:50mA, Zero Gate Voltage Drain Current Idss Max:50mA, Gate-Source Cutoff Voltage Vgs(off) Max:-10V , RoHS Compliant: No |
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