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參數(shù)資料
| 型號： | 2N4856 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最大導通電阻25Ω的N溝道結型場效應管) |
| 中文描述： | N溝道場效應（最小柵源擊穿電壓- 40V的，最大導通電阻25Ω的?溝道結型場效應管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2N4856 |
2N4856JAN/JANTX/JANTXV Series
Siliconix
P-37515—Rev. B, 04-Jul-94
3
Specifications
a
for 2N4859, 2N4860 and 2N4861
Limits
2N4859
2N4860
2N4861
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–55
–30
–30
–30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.5 nA
–4
–10
–2
–6
–0.8
–4
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
50
175
20
100
8
80
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–5
–250
–250
–250
pA
T
A
= 150 C
–13
–500
–500
–500
nA
Gate Operating Current
d
I
G
V
DG
= 15 V, I
D
= 10 mA
–5
pA
Drain Cutoff Current
D( ff)
I
D(off)
V
DS
= 15 V, V
GS
= –10 V
5
250
250
250
T
A
= 150 C
13
500
500
500
nA
I
D
= 5 mA
0.25
0.5
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 10 mA
0.35
0.5
V
I
D
= 20 mA
0.5
0.75
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
25
40
60
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
d
g
fs
V
DG
= 20 V, I
D
= 1 mA
f = 1 kHz
6
mS
Common-Source
Output Conductance
d
g
os
25
S
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
= –10 V
f = 1 MHz
7
18
18
18
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
3
8
8
8
Equivalent Input
Noise Voltage
d
e
n
V
DG
= 10 V, I
D
= 10 mA
f = 1 kHz
3
nV
√
Hz
Switching
Turn On Time
Turn-On Time
t
d(on)
V
DD
= 10 V, V
GS(H)
= 0 V
See Switching Circuit
10 V V
2
6
6
10
t
r
2
3
4
10
ns
Turn-Off Time
t
OFF
19
25
50
100
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
100 s duty cycle
10%.
This parameter not registered with JEDEC.
NCB
相關PDF資料 |
PDF描述 |
|---|---|
| 2N4857 | N-Channel JFET(最小柵源擊穿電壓-40V，最大導通電阻40Ω的N溝道結型場效應管) |
| 2N4858 | N-Channel JFET(最小柵源擊穿電壓-40V，最大導通電阻60Ω的N溝道結型場效應管) |
| 2N4859 | N-Channel JFET(最小柵源擊穿電壓-30V，最大導通電阻25Ω的N溝道結型場效應管) |
| 2N4860 | N-Channel JFET(最小柵源擊穿電壓-30V，最大導通電阻40Ω的N溝道結型場效應管) |
| 2N4861 | N-Channel JFET(最小柵源擊穿電壓-30V，最大導通電阻60Ω的N溝道結型場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4856_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET |
| 2N4856A | 功能描述:JFET Leaded JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4856A-E3 | 功能描述:JFET 40V 5pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4856JAN | 制造商:Harris Corporation 功能描述: |
| 2N4856JAN01 | 制造商:Vishay Intertechnologies 功能描述:Trans JFET N-CH 3-Pin TO-206AA |
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