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參數(shù)資料
| 型號： | 2N4427 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon planar epitaxial overlay transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 45K |
| 代理商： | 2N4427 |
1995 Oct 27
5
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
2N3866
2N4427
collector-emitter breakdown voltage
2N3866
2N4427
collector-emitter breakdown voltage
2N3866
2N4427
emitter-base breakdown voltage
2N3866
2N4427
collector-emitter saturation voltage
2N3866
2N4427
collector leakage current
2N3866
2N4427
DC current gain
2N3866
2N3866
2N4427
2N4427
transition frequency
collector capacitance
2N3866
2N4427
open emitter; I
C
= 100
μ
A
55
40
V
V
V
(BR)CEO
open base; I
C
= 5 mA
30
20
V
V
V
(BR)CER
R
BE
= 10
; I
C
= 5 mA
55
40
V
V
V
(BR)EBO
open collector; I
E
= 100
μ
A
3.5
2
V
V
V
CEsat
I
C
= 100 mA; I
B
= 20 mA
1
0.5
V
V
I
CEO
open base; V
CE
= 28 V
open base; V
CE
= 12 V
20
20
μ
A
μ
A
h
FE
I
C
= 50 mA; V
CE
= 5 V
I
C
= 360 mA; V
CE
= 5 V
I
C
= 100 mA; V
CE
= 5 V
I
C
= 360 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 15 V; f = 200 MHz
10
5
10
5
500
200
200
f
T
C
c
MHz
V
CB
= 28 V; I
E
= I
e
= 0; f = 1 MHz
V
CB
= 12 V; I
E
= I
e
= 0; f = 1 MHz
3
4
pF
pF
APPLICATION INFORMATION
Table 1
RF performance at T
mb
= 25
°
C.
TYPE
NUMBER
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
I
C
(mA)
η
(%)
2N3866
100
250
400
175
470
28
28
28
12
12
1.8
1.5
1.0
1.0
0.4
>10
>10
>10
>10
>10
<107
<107
<79
<167
67
>60
>50
>45
>50
50
2N4427
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