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參數(shù)資料
| 型號(hào)： | 2N4416A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-35V，最小飽和漏極電流5mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 35V之間，最小飽和漏極電流5mA的的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 2N4416A |
2N4416/2N4416A/SST4416
4
Siliconix
S-52424—Rev. E, 14-Apr-97
Typical Characteristics (Cont’d)
–
I
D
Output Characteristics
5
0
1.0
4
3
2
1
0
V
DS
– Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
V
GS
= 0 V
V
GS(off)
= –2 V
–
I
D
Output Characteristics
5
0
1.0
4
3
2
1
0
V
DS
– Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
V
GS
= 0 V
V
GS(off)
= –3 V
–0.4 V
–0.2 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
–1.2 V
–1.5 V
–1.8 V
–2.1 V
–0.3 V
–0.9 V
–0.6 V
10
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
D
Transfer Characteristics
V
GS(off)
= –2 V
T
A
= –55 C
125 C
–
I
D
Transfer Characteristics
T
A
= –55 C
125 C
V
GS(off)
= –3 V
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
V
GS(off)
= –2 V
T
A
= –55 C
125 C
g
f
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
T
A
= –55 C
125 C
V
GS(off)
= –3 V
g
f
0
8
6
4
2
0
–2
–0.4
–0.8
–1.2
–1.6
10
0
8
6
4
2
0
–3
–0.6
–1.2
–1.8
–2.4
10
0
8
6
4
2
0
–2
–0.4
–0.8
–1.2
–1.6
10
0
8
6
4
2
0
–3
–0.6
–1.2
–1.8
–2.4
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
25 C
25 C
25 C
25 C
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|---|---|
| 2N4416A_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET |
| 2N4416A_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-92 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A-2 | 制造商:Vishay Siliconix 功能描述:FIELD EFFECT TRANSISTOR |
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