參數(shù)資料
型號(hào): 2N4036
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Small Signal Transistors
中文描述: 1000 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: TO-39, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 51K
代理商: 2N4036
1997 Jun 19
3
Philips Semiconductors
Product specification
PNP switching transistor
2N4036
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
90
65
7
1
1
500
7
+200
200
+200
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
55
55
V
V
V
A
A
mA
W
°
C
°
C
°
C
T
mb
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
thermal resistance from junction to case
in free air
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
5
50
200
140
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
60 V
I
E
= 0; V
CB
=
60 V; T
amb
= 150
°
C
I
C
= 0; V
EB
=
4 V
I
C
=
0.1 mA; V
CE
=
10 V
I
C
=
150 mA; V
CE
=
2 V
I
C
=
150 mA; V
CE
=
10 V
I
C
=
150 mA; V
CE
=
10 V;
T
amb
= 55
°
C
I
C
=
150 mA; I
B
=
15 mA
I
C
=
150 mA; I
B
=
15 mA
I
C
=
150 mA; V
CE
=
10 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
50 mA; V
CE
=
10 V; f = 100 MHz
20
20
40
20
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
V
BEsat
V
BEon
C
c
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-stage voltage
collector capacitance
transition frequency
60
650
1.4
1.5
30
mV
V
V
pF
MHz
Switching times (between 10% and 90% levels)
t
on
t
r
t
off
t
s
t
f
turn-on time
rise time
turn-off time
storage time
fall time
I
Con
=
150 mA; I
Bon
=
15 mA;
I
Boff
= 15 mA
110
70
700
600
100
ns
ns
ns
ns
ns
相關(guān)PDF資料
PDF描述
2N4036 CASE 79.04, STYLE 1 TO-39 (TO-205AD)
2N4036 Medium-Speed Switch(硅平面外延工藝PNP晶體管(用于中速開(kāi)關(guān)))
2N4037 COMPLEMENTARY SILICON TRANSISTORS
2N-PN3053 COMPLEMENTARY SILICON TRANSISTORS
2N-PN4037 COMPLEMENTARY SILICON TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4036 W/GOLD 功能描述:TRANS PNP 65V 1A TO-39 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標(biāo)準(zhǔn)包裝:500
2N4036 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-39
2N4036MC 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-39
2N4036MOT91 制造商:Motorola 功能描述:2N4036
2N4037 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2