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參數(shù)資料
| 型號(hào)： | 2N4033UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon PNP Transistor |
| 中文描述： | 硅PNP晶體管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 240K |
| 代理商： | 2N4033UB |
Copyright
2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N4033UB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
I
CBO1
I
CBO2
I
CBO3
I
CEX
I
EBO1
I
EBO2
Test Conditions
CB
= 80 Volts
V
CB
= 60 Volts
V
CB
= 60 Volts, T
A
= 150
°
C
V
CE
= 60 Volts, V
EB
= 2 Volts
V
BE
= 5 Volts
V
BE
= 3 Volts
Min
Typ
Max
10
10
25
25
10
25
Units
μ
A
nA
μ
A
nA
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
μ
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
Test Conditions
I
C
= 100
μ
A, V
CE
= 5 Volts
I
C
= 100 mA, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 5 Volts
T
A
= -55
°
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
Min
50
100
70
25
30
Typ
Max
300
0.9
1.2
0.15
0.50
1.00
Units
DC Current Gain
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
V
CEsat3
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 100 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
1.5
6.0
Open Circuit Output Capacitance
C
OBO
20
pF
Open Circuit Input Capacitance
C
IBO
80
pF
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
I
C
= 500 mA, I
B
= 50 mA
15
25
175
35
ns
I
C
= 500 mA, I
B
= 50 mA
ns
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