- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369020 > 2N4029 (Semicoa Semiconductor) Type 2N4029 Geometry 6700 Polarity PNP PDF資料下載
參數(shù)資料
| 型號： | 2N4029 |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N4029 Geometry 6700 Polarity PNP |
| 中文描述： | 類型2N4029幾何6700極性進(jìn)步黨 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 2N4029 |
Data S heet No. 2N4029
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA, pulsed
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, pulsed
Emitter-Base Breakdown Voltage
I
C
= 10 μA, pulsed
Collector-Base Cutoff Current
V
CB
= 60 V
V
CB
= 60 V, T
A
= +150
o
C
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 2.0 V
Base-Emitter Cutoff Current
V
BE
= 3 V
Symbol
Min
Max
Unit
I
CBO1
I
CBO2
---
---
10
25
nA
μA
I
EBO
---
25
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
80
---
I
CEX1
---
25
V
(BR)CEO
80
---
V
(BR)EBO
5.0
---
ON Characteristics
Forward current Transfer Ratio
I
C
= 100 μA, V
CE
= 5 V
I
C
= 100 mA, V
CE
= 5.0 V (pulse test)
I
C
= 500 mA, V
CE
= 5 V (pulse test)
I
C
= 1.0 A, V
CE
= 5 V (pulse test)
I
C
= 500 mA, V
CE
= 5.0 V (pulse test), T
A
= -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 50 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Switching Characteristics
Delay Time
I
C
= 500 mA, I
B1
= 50 mA
Rise Time
I
C
= 500 mA, I
B1
= 50 mA
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
50
100
70
25
30
---
300
---
---
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
---
---
---
0.15
0.5
1.0
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
Symbol
---
---
Min
0.9
1.2
Max
V dc
V dc
Unit
C
IBO
---
80
pF
pF
C
OBO
---
20
---
|h
fe
|
1.5
6.0
Symbol
Min
Max
Unit
t
f
---
35
ns
t
s
---
175
ns
t
r
---
25
ns
ns
t
d
---
15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4029 | PNP SILICON TRANSISTOR |
| 2N4029 | Small Signal Transistors |
| 2N4030 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
| 2N4030 | Small Signal Transistors |
| 2N4032 | GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4029_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N4029_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON SWITCHING TRANSISTOR |
| 2N4029_13 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal Switching Transistor |
| 2N4029JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-18 |
| 2N403 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-5 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。