- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371457 > 2N3905 (FAIRCHILD SEMICONDUCTOR CORP) PNP General Purpose Amplifier(PNP型通用放大器) PDF資料下載
參數(shù)資料
| 型號： | 2N3905 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP型通用放大器) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 26K |
| 代理商： | 2N3905 |
2
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEX
Collector Cutoff Current
I
BL
Base Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
OB
= 3.0 V
V
CE
= 30 V, V
OB
= 3.0 V
40
40
5.0
V
V
V
nA
nA
50
50
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 0.1 mA
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
V
CE
= 1.0 V, I
C
= 100 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
40
50
30
15
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.25
0.40
0.85
0.95
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.65
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small-Signal Current Gain
C
ob
C
ib
h
fe
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
=10 V,
f = 1.0 KHz
4.5
10
pF
pF
2.0
h
fe
h
re
h
ie
h
oe
NF
Small-Signal Current Gain
Voltage Feedback Ratio
Input Impedance
Output Impedance
Noise Figure
50
0.1
0.5
1.0
200
5.0
8.0
40
5.0
x10
-4
k
μ
mhos
dB
V
CE
= 5.0 V, I
C
= 100
μ
A,
R
S
= 1.0 k
,
B
W
= 10 Hz to 15.7 KHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
d
t
r
t
s
t
f
V
CC
= 3.0 V, I
CS
= 10 mA,
I
B1
= 1.0 mA ,V
OB
( off )
= 3.0 V
V
CC
= 3.0 V, I
CS
= 10 mA,
I
B1
= I
B2
= 1.0 mA
35
35
200
60
ns
ns
ns
ns
ON CHARACTERISTICS*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4123 | NPN Silicon General Purpose Transistors(集電極-發(fā)射極電壓30V，集電極-基極電壓40V的NPN通用型晶體管) |
| 2N4123 | General Purpose NPN Silicon Transistor(30V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 2N4124 | NPN Silicon General Purpose Transistors(集電極-發(fā)射極電壓25V，集電極-基極電壓30V的NPN通用型晶體管) |
| 2N4123 | NPN General Purpose Amplifier(NPN型通用放大器) |
| 2N4184 | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3905/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors PNP |
| 2N3905_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| 2N3905_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3905_D29Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3905BU | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。