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參數(shù)資料
| 型號(hào)： | 2N3810 |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3810 Geometry 0220 Polarity PNP |
| 中文描述： | 類型2N3810幾何0220極性進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2N3810 |
LAB
SEME
2N3810DCSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Parameter
TRANSISTOR MATCHING CHARACTERISTICS
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
Test Conditions
Min.
Typ.
Max.
Unit
—
mV
mV
0.9
1
5
3
0.8
1
h
FE1
h
FE2
Static Forward Current Gain
Balance Ratio
|V
BE1
– V
BE2
|
Base – Emitter Voltage
Differential
|
(V
BE1
– V
BE2
)
T
A
|
Base – Emitter Voltage
Differential
V
CE
= –5V
See Note 2.
V
CE
= –5V
I
C
= –10
μ
A to –10mA
V
CE
= –5V
V
CE
= –5V
T
A1
= 25°C
V
CE
= –5V
T
A1
= 25°C
I
C
= –100
μ
A
I
C
= –100
μ
A
I
C
= –100
μ
A
T
A2
= –55°C
I
C
= –100
μ
A
T
A2
= 125°C
OPERATING CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Parameter
INDIVIDUAL TRANSISTOR CHARACTERISTICS
Test Conditions
1
Min.
Typ.
Max.
Unit
dB
dB
7
3
2.5
3.5
F
Spot Noise Figure
_
F
Average Noise Figure
V
CE
= –10V
R
G
= 3k
Noise Bandwidth = 20Hz
V
CE
= –10V
R
G
= 3k
Noise Bandwidth = 200Hz
V
CE
= –10V
R
G
= 3k
Noise Bandwidth = 2kHz
V
CE
= –10V
R
G
= 3k
Noise Bandwidth = 15.7kHz
See Note 3.
I
C
= –100
μ
A
f = 100Hz
I
C
= –100
μ
A
f = 1kHz
I
C
= –100
μ
A
f = 10kHz
I
C
= –100
μ
A
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PDF描述 |
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| 2N3811 | Type 2N3811 Geometry 0220 Polarity PNP |
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| 2N3810_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N3810_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON DUAL TRANSISTOR |
| 2N3810_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON DUAL TRANSISTOR |
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