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參數(shù)資料
| 型號(hào)： | 2N3771 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Power NPN Silicon Transistor(高功率NPN硅功率晶體管) |
| 中文描述： | 高功率NPN硅晶體管（高功率npn型硅功率晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | 2N3771 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
for
2N3771
V
CB
= 50 V
for
2N3772
V
CB
= 100 V
for all V
CB
= 30 V T
j
= 150
o
C
2
5
10
mA
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CEV(sus)
Collector-Emitter
Sustaining Voltage
(V
EB
= -1.5V)
V
CER(sus)
Collector-Emitter
Sustaining Voltage
(R
BE
= 100
)
V
CE(sat)
Collector-Emitter
Saturation Voltage
for
2N3771
V
CB
= 30 V
for
2N3772
V
CB
= 50 V
for
2N3771
V
CB
= 50 V
for
2N3772
V
CB
= 100 V
for
2N3771
V
CB
= 5 V
for
2N3772
V
CB
= 7 V
I
C
= 0.2 A
for
2N3771
for
2N3772
I
C
= 0.2 A R
BE
= 100
for
2N3771
for
2N3772
10
10
mA
mA
I
CBO
4
5
mA
mA
I
EBO
5
5
mA
mA
40
60
V
V
50
80
V
V
I
C
= 0.2 A
for
2N3771
for
2N3772
45
70
V
V
for
2N3771
I
C
= 15 A I
B
= 1.5 A
I
C
= 30 A I
B
= 6 A
for
2N3772
I
C
= 10 A I
B
= 1 A
I
C
= 20 A I
B
= 4 A
for
2N3771
I
C
= 15 A V
CE
= 4 V
for
2N3772
I
C
= 10 A V
CE
= 4 A
for
2N3771
I
C
= 15 A V
CE
= 4 V
I
C
= 30 A V
CE
= 4 V
for
2N3772
I
C
= 10 A V
CE
= 4 V
I
C
= 20 A V
CE
= 4 V
2
4
1.4
4
V
V
V
V
V
BE
Base-Emitter Voltage
2.7
2.7
V
V
h
FE
DC Current Gain
15
5
15
5
60
60
h
FE
Small Signal Current
Gain
Transition frequency
I
C
= 1 A V
CE
= 4 V f = 1 KHz
40
f
T
I
s/b
I
C
= 1 A V
CE
= 4 V f = 50 KHz
V
CE
= 25 V t = 1 s (non repetitive)
0.2
MHz
Second Breakdown
Collector Current
6
A
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
2N3771/2N3772
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N3771_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771G | 功能描述:兩極晶體管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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