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參數(shù)資料
| 型號(hào)： | 2N3634CSM |
| 英文描述： | PNP |
| 中文描述： | 進(jìn)步黨 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N3634CSM |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
175
175
5.0
50
100
80
90
100
100
50
300
0.3
0.5
0.8
0.9
.65
200
10
75
200
1200
3.0
320
200
80
3.0
400
600
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BV
CEO
BV
CBO
BV
EBO
I
EBO
I
CBO
Collector
–
Emitter Breakdown Voltage
1
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector
–
Emitter Saturation Voltage
1
V
BE(sat)
Base
–
Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
re
h
fe
h
oe
Input Impedance
Voltage Feedback Ratio
Small Siganl Current Gain
Ourput Admittance
NF
t
on
t
off
Turn
–
On Time
Turn
–
Off Time
I
C
= 10mA
I
C
= 100
m
A
I
C
= 0
V
BE
= 3.0V
V
CB
= 100V
I
B
= 0
I
E
= 0
I
E
= 10
m
A0
I
C
= 0
I
E
= 0
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
V
CE
= 20V
I
C
= 50mA
f = 100MHz
I
E
= 0
f = 100kHz
I
C
= 0
f = 100kHz
V
CB
= 20V
V
BE
= 1.0V
V
CE
= 10V
I
C
= 10mA
f = 1kHz
V
CE
= 10V
R
S
= 1.0
W
I
C
= 0.5mA
f = 1kHz
V
CC
= 100V
I
C
= 50mA I
B1
= I
B2
=5mA
V
BE
= 4.0V
V
nA
-
V
V
MHz
pF
pF
W
x10
-4
—
m
mhos
dB
ns
Prelim. 2/00
2N3637CSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
1) Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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|---|---|
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| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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