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參數(shù)資料
| 型號： | 2N3507A |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2N3507A |
2N3507A
Silicon NPN Transistor
Data Sheet
Copyright
2007
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
I
C
= 100
μ
A
Min
Typ
Max
Units
Volts
Collector-Base Breakdown Voltage
V
(BR)CBO
80
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
50
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A
5
Volts
Collector-Emitter Cutoff Current
I
CEX1
V
CE
= 60 Volts, V
EB
= 4 Volts
V
CE
= 60 Volts, V
EB
= 4 Volts,
T
A
= 150
°
C
1
μ
A
Collector-Emitter Cutoff Current
I
CEX2
1.5
mA
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
BEsat1
V
BEsat2
V
BEsat3
V
CEsat1
V
CEsat2
V
CEsat3
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 2 Volts
T
A
= -55
°
C
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
Min
35
30
25
20
17
0.8
Typ
Max
175
150
1.0
1.3
2.0
0.5
1.0
1.5
Units
DC Current Gain
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Symbol
Test Conditions
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 1.5 A, I
B1
= 150 mA
Min
Typ
Max
Units
|h
FE
|
3
15
Open Circuit Output Capacitance
C
OBO
40
pF
Open Circuit Input Capacitance
C
IBO
300
pF
Delay Time
t
d
15
ns
Rise Time
Switching Characteristics
t
r
I
C
= 1.5 A, I
B1
= 150 mA
30
ns
Storage Time
t
s
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
55
ns
Fall Time
t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
35
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3507AJANS | 制造商:Semicoa Semiconductors 功能描述:2N3507AJS |
| 2N3507AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-5 - Bulk |
| 2N3507AU4 | 功能描述:NPN TRANSISTOR 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:1μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| 2N3507JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| 2N3507JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
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