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參數(shù)資料
| 型號： | 2N3506A |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 204K |
| 代理商： | 2N3506A |
Copyright
2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N3506A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
I
C
= 100
μ
A
Min
Typ
Max
Units
Volts
Collector-Base Breakdown Voltage
V
(BR)CBO
60
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
40
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A
5
Volts
Collector-Emitter Cutoff Current
I
CEX1
V
CE
= 40 Volts, V
EB
= 4 Volts
V
CE
= 40 Volts, V
EB
= 4 Volts,
T
A
= 150
°
C
1
μ
A
Collector-Emitter Cutoff Current
I
CEX2
1.5
mA
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
Test Conditions
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 2 Volts
T
A
= -55
°
C
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
Min
50
40
30
25
25
Typ
Max
250
200
0.5
1.0
1.5
1.0
1.3
2.0
Units
DC Current Gain
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
V
CEsat1
V
CEsat2
V
CEsat3
Volts
Collector-Emitter Saturation Voltage
0.8
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 1.5 A, I
B1
= 150 mA
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
3
15
Open Circuit Output Capacitance
C
OBO
40
pF
Open Circuit Input Capacitance
C
IBO
300
pF
Delay Time
t
d
15
ns
Rise Time
t
r
I
C
= 1.5 A, I
B1
= 150 mA
30
ns
Switching Characteristics
Storage Time
t
s
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
55
ns
Fall Time
t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
35
ns
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