參數(shù)資料
型號： 2N3504
英文描述： PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管)
中文描述： 進步黨外延硅平面晶體管（民進黨外延平面硅晶體管）
文件頁數(shù)： 2/2頁
文件大?。?/td> 23K
代理商： 2N3504
2N3502
2N3503
2N3504
2N3505
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Collector to Base
Breakdown Voltage
Emmiter to Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Test Conditions
Min.
-60
-45
Typ.
Max.
Unit
I
CES
Collector Cutoff Current
Collector Reverse
Current
h
FE
DC Current Gain
Collector Saturation
Voltage
V
BE(sat)
Base Saturation Voltage
F
T
C
ob
t
on
t
off
Transition Frequency
Output Capacitance
Turn On Time
Turn Off Time
-5
-60
-45
0.07
0.05
10
10
10
10
140
115
135
100
80
50
50
270
160
200
150
120
70
100
-0.08
-0.18
-0.5
-0.9
-1.0
300
300
-0.25
-0.4
-1.6
-1.0
-1.3
-2.0
2
2.50
4.5
30
65
8.0
40
100
2N3503 / 2N3505
2N3502 / 2N3504
2N3503 / 2N3505
2N3502 / 2N3504
V
CE
= -50V
V
CE
= -30V
I
E
= 0
t = 150
°
C
I
C
= 10mA
I
C
= 50mA
I
C
= 1.0mA
I
C
= 150mA V
CE
= -10V
I
C
= 10
m
A
I
C
= 500mA V
CE
= -10 V
I
C
= 50mA
I
C
= 50mA
I
C
= 150mA I
B
= 15mA
I
C
= 500mA I
B
= 50mA
I
C
= 50mA
I
C
= 150mA I
B
= 15mA
I
C
= 500mA I
B
= 50mA
I
C
= 50mA
V
CB
= -10V
V
BE
= 0
V
BE
= 0
V
CB
= -50V
V
CB
= -30V
V
CE
= -10V
V
CE
= -1.0V
V
CE
= -10 V
2N3503 / 2N3505
2N3502 / 2N3504
2N3503 / 2N3505
2N3502 / 2N3504
V
CE
= -10V
t = -55
°
C
V
CE
= -1.0V
I
B
= 2.5mA
I
B
= 2.5mA
V
CE
= -20V
I
E
= 0
f = 100MH
Z
I
C
= 300mA I
B1
= 30mA
I
B2
= -30mA
V
V
V
nA
m
A
—
V
V
—
pf
ns
ELECTRICAL CHARACTERISTICS
(25
°
C free air temperature unless otherwise stated)
I
C
= 10
mA
I
E
= 0
I
E
= 10
mA
I
C
= 0
BV
CBO
I
C
= 10m
A
I
B
= 0
BV
EBO
V
CEO
I
CBO(150)
V
CE(sat)
相關(guān)PDF資料
PDF描述
2N3505 PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管)
2N3503 Small Signal Transistors
2N3504 Small Signal Transistors
2N3505 Small Signal Transistors
2N3502 Small Signal Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3505 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3506 制造商:Motorola 功能描述:3506 MOT PULL N5F3B
2N3506_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor
2N3506A 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3A 3PIN TO-39 - Bulk
2N3506AL 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3A 3PIN TO-5 - Bulk
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