- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369004 > 2N3501UB (Semicoa Semiconductor) Silicon NPN Transistor PDF資料下載
參數(shù)資料
| 型號： | 2N3501UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 70K |
| 代理商： | 2N3501UB |
2N3501UB
Silicon NPN Transistor
Data Sheet
Copyright
2004
Rev. J.2
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
EBO1
I
EBO2
I
C
= 10 mA
V
CB
= 150 Volts
V
CB
= 75 Volts
V
CB
= 75 Volts, T
A
= 150
°
C
V
CE
= 120 Volts
V
EB
= 6 Volts
V
EB
= 4 Volts
150
Collector-Base Cutoff Current
10
50
50
1
10
25
μ
A
nA
μ
A
μ
A
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
μ
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE7
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 1500 mA, V
CE
= 10 Volts
I
C
= 300 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
T
A
= -55
°
C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
Min
35
50
75
100
20
45
Typ
Max
300
0.8
1.2
0.2
0.4
Units
DC Current Gain
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 10 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 1 kHz, R
g
= 1 k
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 10 kHz, R
g
= 1 k
Min
Typ
Max
Units
|h
FE
|
1.5
8
h
FE
75
375
Open Circuit Output Capacitance
C
OBO
8
pF
Open Circuit Input Capacitance
C
IBO
80
pF
Noise Figure
NF
1
NF
2
16
6
dB
Switching Characteristics
Saturated Turn-On Time
t
ON
V
EB
= 5 Volts, I
C
= 150 mA,
I
B1
= 15 mA
I
C
= 150 mA, I
B1
=I
B2
=15 mA
115
ns
Saturated Turn-Off Time
t
OFF
1,150
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3502 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3502 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3503 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3504 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3505 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3501UBJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANSR | 制造商:Microsemi Corporation 功能描述: |
| 2N3501UBJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANTX-TR | 制造商:Semicoa Semiconductors 功能描述:2N3501UBJX |
| 2N3501UBJANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin SMD 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。